Nitrogen-activated bowing of dilute InyGa1-yAs1-xNx based on photoreflectance studies
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Abstract
The dependence of the fundamental band gap and higher-lying critical-point energies of dilute-nitrogen Ga1-yInyAs1-xNx epilayers on nitrogen mole fraction (x), for x≤0.0125, and temperature, from 20 to 300 K, was investigated by photoreflectance spectroscopy. The band gap, EG, was found to decrease with increasing x in a highly nonlinear manner. The bowing parameter (the second-order parameter b in a quadratic expression for the dependence of EG on x) was found to become less negative with increasing x; the value of b changed from -50 eV, at very low nitrogen fraction, to -20 eV, at x>0.01. These results strongly suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen Ga1-yInyAs1-xNx alloys. © 2003 American Institute of Physics.
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Fahmi</name><affiliation><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Physics and Astrophysics, Arizona State University, Tempe, Arizona 85287</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astrophysics, Arizona State University, Tempe</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Air Force Research Laboratory, Air Force Office of Scientific Research, 801 North Randolph Street, Arlington, Virginia 22203-1977</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Air Force Research Laboratory, Air Force Office of Scientific Research, 801 North Randolph Street, Arlington</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Department of Electrical Engineering, Howard University, Washington, DC 20059</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Department of Electrical Engineering, Howard University, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Khan, Arif" uniqKey="Khan A">Arif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Griffin, J A" uniqKey="Griffin J">J. A. Griffin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Harris, G L" uniqKey="Harris G">G. L. Harris</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Robins, Lawrence H" uniqKey="Robins L">Lawrence H. Robins</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Institute of Standard and Technology, 100 Bureau Drive, Stop 8522, Gaithersburg, Maryland 20899-8522</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>National Institute of Standard and Technology, 100 Bureau Drive, Stop 8522, Gaithersburg</wicri:cityArea></affiliation></author><author><name sortKey="Birdwell, A G" uniqKey="Birdwell A">A. G. Birdwell</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Institute of Standard and Technology, 100 Bureau Drive, Stop 8522, Gaithersburg, Maryland 20899-8522</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>National Institute of Standard and Technology, 100 Bureau Drive, Stop 8522, Gaithersburg</wicri:cityArea></affiliation></author><author><name sortKey="Kang, Youn Seon" uniqKey="Kang Y">Youn-Seon Kang</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Institute of Standard and Technology, 100 Bureau Drive, Stop 8522, Gaithersburg, Maryland 20899-8522</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>National Institute of Standard and Technology, 100 Bureau Drive, Stop 8522, Gaithersburg</wicri:cityArea></affiliation></author><author><name sortKey="Smith, David J" uniqKey="Smith D">David J. Smith</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Steiner, Todd" uniqKey="Steiner T">Todd Steiner</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Mohammad, S Noor" uniqKey="Mohammad S">S. Noor Mohammad</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0519894</idno><date when="2003-12-15">2003-12-15</date><idno type="stanalyst">PASCAL 03-0519894 AIP</idno><idno type="RBID">Pascal:03-0519894</idno><idno type="wicri:Area/Main/Corpus">00C500</idno><idno type="wicri:Area/Main/Repository">00BD32</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Energy gap</term><term>Experimental study</term><term>Gallium arsenides</term><term>Impurity states</term><term>Indium compounds</term><term>Photoreflectance</term><term>Semiconductor epitaxial layers</term><term>Visible spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7155E</term><term>7840F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Couche épitaxique semiconductrice</term><term>Etat impureté</term><term>Photoréflectance</term><term>Spectre visible</term><term>Bande interdite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The dependence of the fundamental band gap and higher-lying critical-point energies of dilute-nitrogen Ga<sub>1-y</sub>In<sub>y</sub>As<sub>1-x</sub>N<sub>x</sub> epilayers on nitrogen mole fraction (x), for x≤0.0125, and temperature, from 20 to 300 K, was investigated by photoreflectance spectroscopy. The band gap, E<sub>G</sub>, was found to decrease with increasing x in a highly nonlinear manner. The bowing parameter (the second-order parameter b in a quadratic expression for the dependence of E<sub>G</sub> on x) was found to become less negative with increasing x; the value of b changed from -50 eV, at very low nitrogen fraction, to -20 eV, at x>0.01. These results strongly suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen Ga<sub>1-y</sub>In<sub>y</sub>As<sub>1-x</sub>N<sub>x</sub> alloys. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Nitrogen-activated bowing of dilute In<sub>y</sub>Ga<sub>1-y</sub>As<sub>1-x</sub>N<sub>x</sub> based on photoreflectance studies</s1></fA08><fA11 i1="01" i2="1"><s1>FAHMI (M. M. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>KHAN (Arif)</s1></fA11><fA11 i1="03" i2="1"><s1>GRIFFIN (J. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>HARRIS (G. L.)</s1></fA11><fA11 i1="05" i2="1"><s1>ROBINS (Lawrence H.)</s1></fA11><fA11 i1="06" i2="1"><s1>BIRDWELL (A. G.)</s1></fA11><fA11 i1="07" i2="1"><s1>KANG (Youn-Seon)</s1></fA11><fA11 i1="08" i2="1"><s1>SMITH (David J.)</s1></fA11><fA11 i1="09" i2="1"><s1>STEINER (Todd)</s1></fA11><fA11 i1="10" i2="1"><s1>MOHAMMAD (S. Noor)</s1></fA11><fA14 i1="01"><s1>Materials Science Research Center of Excellence, 2300 Sixth Street NW, Washington, DC 20059</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>National Institute of Standard and Technology, 100 Bureau Drive, Stop 8522, Gaithersburg, Maryland 20899-8522</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics and Astrophysics, Arizona State University, Tempe, Arizona 85287</s1></fA14><fA14 i1="04"><s1>Air Force Research Laboratory, Air Force Office of Scientific Research, 801 North Randolph Street, Arlington, Virginia 22203-1977</s1></fA14><fA14 i1="05"><s1>Department of Electrical Engineering, Howard University, Washington, DC 20059</s1></fA14><fA20><s1>7576-7580</s1></fA20><fA21><s1>2003-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0519894</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The dependence of the fundamental band gap and higher-lying critical-point energies of dilute-nitrogen Ga<sub>1-y</sub>In<sub>y</sub>As<sub>1-x</sub>N<sub>x</sub> epilayers on nitrogen mole fraction (x), for x≤0.0125, and temperature, from 20 to 300 K, was investigated by photoreflectance spectroscopy. The band gap, E<sub>G</sub>, was found to decrease with increasing x in a highly nonlinear manner. The bowing parameter (the second-order parameter b in a quadratic expression for the dependence of E<sub>G</sub> on x) was found to become less negative with increasing x; the value of b changed from -50 eV, at very low nitrogen fraction, to -20 eV, at x>0.01. These results strongly suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen Ga<sub>1-y</sub>In<sub>y</sub>As<sub>1-x</sub>N<sub>x</sub> alloys. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70A55E</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H40F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7155E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7840F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etat impureté</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Impurity states</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photoréflectance</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photoreflectance</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Spectre visible</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Visible spectra</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fN21><s1>342</s1></fN21><fN47 i1="01" i2="1"><s0>0348M000111</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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